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Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate
The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...
Gardado en:
| Autor Principal: | |
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| Outros autores: | |
| Formato: | Dissertation |
| Idioma: | inglés |
| Publicado: |
Philipps-Universität Marburg
2017
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| Schlagworte: | |
| Acceso en liña: | Texto completo PDF |
| Tags: |
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Internet
Texto completo PDF| Número de Clasificación: |
urn:nbn:de:hebis:04-z2017-01160 |
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| Data de Publicación: |
2017-03-15 |
| Datum der Annahme: |
2017-02-13 |
| Downloads: |
82 (2024), 82 (2023), 50 (2022), 22 (2021), 4 (2020), 16 (2019), 15 (2018) |
| Lizenz: |
https://rightsstatements.org/vocab/InC-NC/1.0/ |
| URL de acceso: |
https://archiv.ub.uni-marburg.de/diss/z2017/0116 https://doi.org/10.17192/z2017.0116 |