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Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate
The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...
Sábháilte in:
| Príomhchruthaitheoir: | |
|---|---|
| Rannpháirtithe: | |
| Formáid: | Dissertation |
| Teanga: | Béarla |
| Foilsithe / Cruthaithe: |
Philipps-Universität Marburg
2017
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| Ábhair: | |
| Rochtain ar líne: | An téacs iomlán mar PDF |
| Clibeanna: |
Cuir clib leis
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Ar líne
An téacs iomlán mar PDF| Gairmuimhir: |
urn:nbn:de:hebis:04-z2017-01160 |
|---|---|
| Dáta a fhoilsithe: |
2017-03-15 |
| Datum der Annahme: |
2017-02-13 |
| Downloads: |
79 (2024), 82 (2023), 50 (2022), 22 (2021), 4 (2020), 16 (2019), 15 (2018) |
| Lizenz: |
https://rightsstatements.org/vocab/InC-NC/1.0/ |
| URL Rochtana: |
https://archiv.ub.uni-marburg.de/diss/z2017/0116 https://doi.org/10.17192/z2017.0116 |