Structural analysis of dilute bismide alloys by means of high resolution scanning transmission electron microscopy

Structural analysis of dilute bismide alloys by means of high resolution scanning transmission electron microscopy

Energy efficiency plays a key role in the development of new industrial as well as daily life applications. There exists a strong demand for a new energy efficient generation of optoelectronic devices, especially in the growing market of internet data transfer where devices operate in the 1.55 µm...

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Autor Principal: Knaub, Nikolai
Outros autores: Volz, Kerstin (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2016
Schlagworte:
semiconductor physics
Raster-Transmissions-Elektronenmikroskopie
Halbleiterphysik
Verdünnte Legierung
dilute bismide alloys
III-V semiconductors
Bismut
Verbindungshalbleiter
Physik
Scanning transmission electron microscopy
Physics
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Número de Clasificación: urn:nbn:de:hebis:04-z2016-06566
Data de Publicación: 2016-09-29
Datum der Annahme: 2016-06-23
Downloads: 103 (2024), 110 (2023), 38 (2022), 42 (2021), 33 (2020), 22 (2019), 11 (2018)
Lizenz: https://creativecommons.org/licenses/by-nc-sa/4.0
URL de acceso: https://archiv.ub.uni-marburg.de/diss/z2016/0656
https://doi.org/10.17192/z2016.0656

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