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Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes
A lot of energy in today's optical communication is wasted due to the inefficiency of optoelectronic devices operating at the telecommunication wavelength of 1.55 µm. The novel Ga(AsBi) material system is very promising to address this as it could enable the fabrication of high efficiency IR ph...
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| Formato: | Dissertation |
| Lenguaje: | inglés |
| Publicado: |
Philipps-Universität Marburg
2014
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| Materias: | |
| Acceso en línea: | Texto Completo PDF |
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