Transmission electron microscopic investigations of heteroepitaxial III/V semiconductor thin layer and quantum well structures

Transmission electron microscopic investigations of heteroepitaxial III/V semiconductor thin layer and quantum well structures

The first part of the thesis presents compositional evaluation of ternary quantum well structures grown on GaAs and GaP substrates using the chemical sensitive 002 dark field imaging in Transmission Electron Microscopy (TEM). The composition retrieved by the dark field intensity measurements and the...

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Autore principale: Németh Igor
Altri autori: Volz, Kerstin (Dr.) (Relatore della tesi)
Natura: Dissertation
Lingua:inglese
Pubblicazione: Philipps-Universität Marburg 2008
Soggetti:
TEM
Refined structure factor calculations
Physik
Heteroepitaxie
Durchstrahlungselektronenmikroskopie
Verfeinerte Strukturfaktorberechnungen
Planar defects
Strukturfaktor
Gitterbaufehler
Planardefekte
Physics
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