Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers

Our current telecommunication is based on the optical transmission of data using semiconductor lasers, which are typically fabricated based on indium phosphide substrates. The layers of material in which the emitted light is generated are typically a few nanometers thick and are therefore referred t...

Full description

Bibliographic Details

Main Author:	Fuchs, Christian
Contributors:	Stolz, Wolfgang (Prof. Dr.) (Thesis advisor)
Format:	Doctoral Thesis
Language:	English
Published:	Philipps-Universität Marburg 2017
Subjects:	Near-infrared Laser III/V Halbleiter Type-II Heterostructures MOVPE Physik Epitaxy MOCVD Nahinfrarot-Laser VECSEL Epitaxie Typ-II Heterostrukturen Kantenemitter III/V Semiconductors Physics Edge Emitter
Online Access:	PDF Full Text
Tags:	Add Tag No Tags, Be the first to tag this record!