Fuchs, C. (2017). Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers. Philipps-Universität Marburg. https://doi.org/10.17192/z2018.0505
Chicago-Zitierstil (17. Ausg.)Fuchs, Christian. Epitaxial Growth and Characterization of GaAs-based Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum Well Heterostructures and Lasers. Philipps-Universität Marburg, 2017. https://doi.org/10.17192/z2018.0505.
MLA-Zitierstil (9. Ausg.)Fuchs, Christian. Epitaxial Growth and Characterization of GaAs-based Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum Well Heterostructures and Lasers. Philipps-Universität Marburg, 2017. https://doi.org/10.17192/z2018.0505.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.