In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In order to handle toxic and phyrophoric precursors inside a TEM and therefore facilitate group V stabilized thermal annealing experiments, significant changes of the original in situ system (designed and produced by Protochips) are necessary. To further ensure safely when storing and transfering th...

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Bibliographic Details

Main Author:	Straubinger, Rainer
Contributors:	Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format:	Doctoral Thesis
Language:	English
Published:	Philipps-Universität Marburg 2018
Subjects:	Kristallwachstum, Thermisches Aufheizen, Halbleiter In Situ III/V semiconductor Physik crystal growth Halbleiterphysik Raster-Transmissions-Elektronenmikroskopie Semiconductor materials in situ Thermal annealing Physics
Online Access:	PDF Full Text
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