In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials

In order to handle toxic and phyrophoric precursors inside a TEM and therefore facilitate group V stabilized thermal annealing experiments, significant changes of the original in situ system (designed and produced by Protochips) are necessary. To further ensure safely when storing and transfering th...

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Bibliographic Details
Main Author: Straubinger, Rainer
Contributors: Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format: Doctoral Thesis
Language:English
Published: Philipps-Universität Marburg 2018
Subjects:
Kristallwachstum, Thermisches Aufheizen,
Halbleiter
In Situ
III/V semiconductor
Physik
crystal growth
Halbleiterphysik
Raster-Transmissions-Elektronenmikroskopie
Semiconductor materials
in situ
Thermal annealing
Physics
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Call Number: urn:nbn:de:hebis:04-z2018-02224
Publication Date: 2018-08-01
Date of Acceptance: 2018-06-21
Downloads: 226 (2024), 195 (2023), 125 (2022), 127 (2021), 77 (2020), 97 (2019), 70 (2018)
License: https://creativecommons.org/licenses/by-nc-sa/4.0
Access URL: https://archiv.ub.uni-marburg.de/diss/z2018/0222
https://doi.org/10.17192/z2018.0222

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