Über Interpnictogenverbindungen und MOVPE-Präkursoren sowie deren Reaktionsverhalten gegenüber Trielen

This work presents the synthesis and characterization of molecules built up by adjacent elements of the nitrogen group. Three-membered, tBu substituted interpnictogen chains with the composition of As2P, Sb2P, AsPSb and even SbPBi are obtained by alternating salt elimination and metalation reaction using the starting materials tBu2ECl (E = As, Sb) and tBuPH2. By reaction of alkyl substituted amines with tBuECl2 (E = As, Sb) compounds of the type tBuE(Cl)NHR (R = tBu, iPr) are accessible. Further substitution on the pnictogen atom succeeds using lithium amides. Compounds with the general formula tBuE(NHR)(NHR‘) (R/R‘ = tBu, iPr) are obtained. Metalation reactions lead to cisoid and transoid ladder-shaped scaffolds in the molecular structure built-up by N, Li and As or Sb atoms. Access to interpnictogen chains with the composition of N-As-P, As-N-As as well as As-N-Sb is described. The binary group 15 compounds tBu2ENH2 (E = As, Sb) react with group 13 organyls in dependence of their sterical demand. H and tBu2E substituted N2M2 cycles (M = Al, Ga), five or seven membered chains or classical Lewis acid base adducts are obtained. The arsenic and nitrogen compound tBu2AsNH2 is suited particularly as novel binary group 15 single source precursor for metal organic vapour phase epitaxy (MOVPE). About 10 to 80 times more efficient N incorporation in Ga(NAs) or (InGa)(NAs) layers is achieved compared to the commercially available precursor 1,1-dimethylhydrazine. Synthesis at large scale as well as the improvement of the purity is described in this work. Produced layers are integrated into multijunction solar cells.