Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...

Full description

Bibliographic Details

Main Author:	Ott, Andrea
Contributors:	Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format:	Doctoral Thesis
Language:	English
Published:	Philipps-Universität Marburg 2017
Subjects:	Lomer Versetzungen Halbleiter Elektronenmikroskopie GaSb Physik, metamorphic growth semiconductor Ga(PSb) Verspannung electron microscopy Ga(AsSb) Physik Lomer dislocations,strain Metamorphes Wachstum Physics
Online Access:	PDF Full Text
Tags:	Add Tag No Tags, Be the first to tag this record!