Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

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Bibliographic Details

Main Author:	Stegmüller, Andreas
Contributors:	Tonner, Ralf (Prof. Dr.) (Thesis advisor)
Format:	Doctoral Thesis
Language:	English
Published:	Philipps-Universität Marburg 2015
Subjects:	functionalization Quantenchemie, Halbleiter density functional theory reaction mechanism Dichtefunktionalformalismus Chemie, Epitaxie semiconductors simulation epitaxy Chemie Chemistry & allied sciences
Online Access:	PDF Full Text
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