Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

Full description

Saved in:
Bibliographic Details
Main Author: Stegmüller, Andreas
Contributors: Tonner, Ralf (Prof. Dr.) (Thesis advisor)
Format: Doctoral Thesis
Language:English
Published: Philipps-Universität Marburg 2015
Subjects:
functionalization
Quantenchemie, Halbleiter
density functional theory
reaction mechanism
Dichtefunktionalformalismus
Chemie, Epitaxie
semiconductors
simulation
epitaxy
Chemie
Chemistry & allied sciences
Online Access:PDF Full Text
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

PDF Full Text

Holdings details from
Call Number: urn:nbn:de:hebis:04-z2015-03833
Publication Date: 2016-02-25
Date of Acceptance: 2015-07-17
Downloads: 180 (2024), 108 (2023), 82 (2022), 33 (2021), 53 (2020), 71 (2019), 38 (2018)
License: https://rightsstatements.org/vocab/InC-NC/1.0/
Access URL: https://archiv.ub.uni-marburg.de/diss/z2015/0383
https://doi.org/10.17192/z2015.0383

Similar Items