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Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes

A lot of energy in today's optical communication is wasted due to the inefficiency of optoelectronic devices operating at the telecommunication wavelength of 1.55 µm. The novel Ga(AsBi) material system is very promising to address this as it could enable the fabrication of high efficiency IR ph...

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Bibliographic Details
Main Author: Ludewig, Peter
Contributors: Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format: Doctoral Thesis
Language:English
Published: Philipps-Universität Marburg 2014
Subjects:
infra red laser diodes
Physik
MOVPE
GaAsBi
Drei-Fünf-Halbleiter
MOCVD-Verfahren
Laserdiode
Epitaxie
verdünnte Bismide
GaNAsBi
Bismut
dilute bismides
Physics
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Call Number: urn:nbn:de:hebis:04-z2015-00503
Publication Date: 2015-02-02
Date of Acceptance: 2014-06-23
Downloads: 69 (2024), 68 (2023), 27 (2022), 33 (2021), 79 (2020), 89 (2019), 136 (2018)
License: https://creativecommons.org/licenses/by-nc-nd/4.0/
Access URL: https://archiv.ub.uni-marburg.de/diss/z2015/0050
https://doi.org/10.17192/z2015.0050

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