Modeling of Optical Properties of Semiconductor Heterostructures

Modeling of Optical Properties of Semiconductor Heterostructures

The equations of motion necessary for the computation of luminescence spectra in realistic semiconductor heterostructures are presented. The combination of these multiband semiconductor luminescence equations on the level of two-particle correlations and scattering terms in 2nd Born-Markov approxima...

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Bibliographische Detailangaben
1. Verfasser: Schlichenmaier, Christoph
Beteiligte: Koch, Stephan W. (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Format: Dissertation
Sprache:Englisch
Veröffentlicht: Philipps-Universität Marburg 2005
Schlagworte:
Lumineszenz
Theory, models, and numerical simulation
Semiconductor physics
Luminescence
Quantum wells
Halbleiterphysik
Optische Eigenschaften
Photomodulierte Reflexion
Optical gain
Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients,
Optischer Gewinn
Halbleiterlaser
Drei-Fünf-Halbleiter
Theoretical modeling
Efficiency, stability, gain, and other operational parameters
Heterostructure
Physik
Semiconductor laser
Modulationsspektroskopie
Theoretische Modellierung
Photoreflectance
III-V semiconductors
Heterostruktur
Physics
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Beschreibung
Zusammenfassung:The equations of motion necessary for the computation of luminescence spectra in realistic semiconductor heterostructures are presented. The combination of these multiband semiconductor luminescence equations on the level of two-particle correlations and scattering terms in 2nd Born-Markov approximation with a k.p-bandstructure calculation allows the quantitative modeling of luminescence spectra. This is demonstrated in theory-to-experiment comparisons. It is also shown why simple rate equations for the luminescence fail at high excitation intensity. Combining bandstructure calculation, semiconductor luminescence equations, and semiconductor Bloch equations it becomes possible to compute a variety of optical properties of semiconductors consistently and quantitatively. This is utilized to compute the appropriate gain spectra from measured luminescence spectra. It is further used to study the expected lasing properties and the carrier loss mechanisms of GaInNAs/GaAs structures in the technologically interesting wavelength range of 1550nm. Finally, the optical properties of a type I to type II transition in the band gap alignment in heterostructures are investigated. In doing so, photomodulated reflectance spectra are computed and analyzed with the help of microscopic theory for the first time.
Umfang:127 Seiten
DOI:10.17192/z2006.0294

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