0500 Oau
1100 2005
2050 ##0##urn:nbn:de:hebis:04-z2006-01022
2051 ##0##10.17192/z2006.0102
3000 Galluppi, Massimo
4000 Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets
4085 ##0##=s MB=u https://archiv.ub.uni-marburg.de/diss/z2006/0102=x H
5050 |530
5584 Quantenwell
5584 Band Offsets
5584 Physik
5584 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
5584 Quantum wells
5584 Photoconduction and photovoltaic effects
5584 Surface Photovoltage
5584 Simulated annealing
5584 Electrooptical effects
5584 III-V semiconductors
5584 Photolumineszenz
opus:1331