Composition determination for quaternary III-V semiconductors by aberration-corrected STEM

Quantitative scanning transmission electron microscopy (STEM) is a powerful tool for the characterization of nano-materials. Absolute composition determination for ternary III–V semiconductors by direct comparison of experiment and simulation is well established. Here, we show a method to determine...

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Bibliographic Details
Main Authors: Duschek, Lennart, Beyer, Andreas, Oelerich, Jan Oliver, Volz, Kerstin
Format: Article
Published: Philipps-Universität Marburg 2019
Online Access:PDF Full Text
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