Composition determination for quaternary III-V semiconductors by aberration-corrected STEM

Quantitative scanning transmission electron microscopy (STEM) is a powerful tool for the characterization of nano-materials. Absolute composition determination for ternary III–V semiconductors by direct comparison of experiment and simulation is well established. Here, we show a method to determine...

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Main Authors: Duschek, Lennart, Beyer, Andreas, Oelerich, Jan Oliver, Volz, Kerstin
Format: Article
Language:English
Published: Philipps-Universität Marburg 2019
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Call Number: urn:nbn:de:hebis:04-es2021-00214
Publication Date: 2021-11-03
Downloads: 35 (2025), 87 (2024), 60 (2023), 57 (2022), 17 (2021)
License: https://creativecommons.org/licenses/by-nc-sa/4.0
Access URL: https://archiv.ub.uni-marburg.de/es/2021/0021
https://doi.org/10.17192/es2021.0021