0500 Oau
1100 2017
2050 ##0##urn:nbn:de:hebis:04-z2018-05055
2051 ##0##10.17192/z2018.0505
3000 Fuchs, Christian
4000 Epitaxial growth and characterization of GaAs-based type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well heterostructures and lasers
4085 ##0##=s MB=u https://archiv.ub.uni-marburg.de/diss/z2018/0505=x H
5050 |530
5584 III/V Halbleiter
5584 MOVPE
5584 VECSEL
5584 Near-infrared Laser
5584 Physik
5584 MOCVD
5584 Edge Emitter
5584 Nahinfrarot-Laser
5584 MOCVD
5584 Epitaxy
5584 MOVPE
5584 VECSEL
5584 Type-II Heterostructures
5584 Epitaxie
5584 Typ-II Heterostrukturen
5584 III/V Semiconductors
5584 Kantenemitter
5584 Physik
5584 Physics
opus:8326