Quantitative Evaluation of the Interfaces in III/V Semiconductors with Scanning Transmission Electron Microscopy
In order to understand the principles of HAADF imaging and also to implement the contrast simulations efficiently and effectively, simulations about HAADF imaging are carried out. The results clearly show that TDS can significantly influence the collected intensity at the detector. In order to in...
में बचाया:
मुख्य लेखक: | |
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अन्य लेखक: | |
स्वरूप: | Dissertation |
भाषा: | अंग्रेज़ी |
प्रकाशित: |
Philipps-Universität Marburg
2017
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विषय: | |
ऑनलाइन पहुंच: | पीडीएफ पूर्ण पाठ |
टैग: |
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