Quantitative Evaluation of the Interfaces in III/V Semiconductors with Scanning Transmission Electron Microscopy

In order to understand the principles of HAADF imaging and also to implement the contrast simulations efficiently and effectively, simulations about HAADF imaging are carried out. The results clearly show that TDS can significantly influence the collected intensity at the detector. In order to in...

Cur síos iomlán

Sábháilte in:
Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Han, Han
Rannpháirtithe: Volz, Kerstin (Prof. Dr.) (Comhairleoir tráchtais)
Formáid: Dissertation
Teanga:Béarla
Foilsithe / Cruthaithe: Philipps-Universität Marburg 2017
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