Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate

The aim of the present study was the growth of antimony-based buffer layers with the lattice constant of InP on a GaP/Si pseudosubstrate by metal organic vapor phase epitaxy (MOVPE) and their structural investigation by atomic force microscopy (AFM), X-ray diffraction (XRD), and (scanning) transmiss...

Full description

Saved in:
Bibliographic Details
Main Author: Ott, Andrea
Contributors: Volz, Kerstin (Prof. Dr.) (Thesis advisor)
Format: Dissertation
Published: Philipps-Universität Marburg 2017
Fachbereich Phy
Online Access:PDF Full Text
Tags: Add Tag
No Tags, Be the first to tag this record!