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Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry
The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...
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| 格式: | Dissertation |
| 语言: | 英语 |
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Philipps-Universität Marburg
2015
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| 在线阅读: | PDF-Volltext |
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