Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

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Bibliografski detalji
Glavni autor: Stegmüller, Andreas
Daljnji autori: Tonner, Ralf (Prof. Dr.) (Savjetnik disertacije)
Format: Dissertation
Jezik:engleski
Izdano: Philipps-Universität Marburg 2015
Teme:
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