Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

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Autor Principal: Stegmüller, Andreas
Outros autores: Tonner, Ralf (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2015
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