Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry

The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...

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Gorde:
Xehetasun bibliografikoak
Egile nagusia: Stegmüller, Andreas
Beste egile batzuk: Tonner, Ralf (Prof. Dr.) (Tesi aholkularia)
Formatua: Dissertation
Hizkuntza:ingelesa
Argitaratua: Philipps-Universität Marburg 2015
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