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Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry
The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...
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| Formato: | Dissertation |
| Lenguaje: | inglés |
| Publicado: |
Philipps-Universität Marburg
2015
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| Acceso en línea: | Texto Completo PDF |
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