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Description of Gallium Phosphide Epitaxy Growth by Computational Chemistry
The following research goals were achieved supporting the development of novel III/V semiconductor materials and their integration in optoelectronic devices. (i) For triethylgallane (TEGa), tert-butylphosphine (TBP) and related precursors, the decomposition networks were comprehensively elaborated...
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| Format: | Dissertation |
| Idioma: | anglès |
| Publicat: |
Philipps-Universität Marburg
2015
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| Accés en línia: | PDF a text complet |
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