0500 Oau
1100 2014
2050 ##0##urn:nbn:de:hebis:04-z2015-00503
2051 ##0##10.17192/z2015.0050
3000 Ludewig, Peter
4000 Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes
4085 ##0##=s MB=u https://archiv.ub.uni-marburg.de/diss/z2015/0050=x H
5050 |530
5584 GaNAsBi
5584 Physik
5584 verdünnte Bismide
5584 Drei-Fünf-Halbleiter
5584 dilute bismides
5584 MOCVD-Verfahren
5584 Physik
5584 GaAsBi
5584 MOVPE
5584 Laserdiode
5584 Epitaxie
5584 infra red laser diodes
5584 Bismut
opus:5913