Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes

Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes

A lot of energy in today's optical communication is wasted due to the inefficiency of optoelectronic devices operating at the telecommunication wavelength of 1.55 µm. The novel Ga(AsBi) material system is very promising to address this as it could enable the fabrication of high efficiency IR ph...

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Bibliografiska uppgifter
Huvudupphovsman: Ludewig, Peter
Övriga upphovsmän: Volz, Kerstin (Prof. Dr.) (BetreuerIn (Doktorarbeit))
Materialtyp: Dissertation
Språk:engelska
Publicerad: Philipps-Universität Marburg 2014
Ämnen:
GaNAsBi
Physik
verdünnte Bismide
Drei-Fünf-Halbleiter
dilute bismides
MOCVD-Verfahren
GaAsBi
MOVPE
Laserdiode
Epitaxie
infra red laser diodes
Bismut
Physics
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