Publikationsserver
Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes
A lot of energy in today's optical communication is wasted due to the inefficiency of optoelectronic devices operating at the telecommunication wavelength of 1.55 µm. The novel Ga(AsBi) material system is very promising to address this as it could enable the fabrication of high efficiency IR ph...
Na minha lista:
| Autor principal: | |
|---|---|
| Outros Autores: | |
| Formato: | Dissertation |
| Idioma: | inglês |
| Publicado em: |
Philipps-Universität Marburg
2014
|
| Assuntos: | |
| Acesso em linha: | Texto Completo em Formato PDF |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|
No citations were found for this record.