Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets

Galluppi, Massimo

Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets

In the last decade great attention has been given to the characteristics of dilute nitrides. Both their peculiar physical properties and their wide range of possible applications have attracted the interest of many experimental and theoretical groups. In this thesis work some open questions about th...

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Detaylı Bibliyografya
Yazar:	Galluppi, Massimo
Diğer Yazarlar:	Stolz, Wolfgang (Dr.) (Tez danışmanı)
Materyal Türü:	Dissertation
Dil:	İngilizce
Baskı/Yayın Bilgisi:	Philipps-Universität Marburg 2005
Konular:	Quantenwell Physik Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Quantum wells Photoconduction and photovoltaic effects Simulated annealing Electrooptical effects III-V semiconductors Band Offsets Surface Photovoltage Photolumineszenz Physics
Online Erişim:	PDF Tam Metin
Etiketler:	Etiketle Etiket eklenmemiş, İlk siz ekleyin!

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Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets

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