Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets

Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets

In the last decade great attention has been given to the characteristics of dilute nitrides. Both their peculiar physical properties and their wide range of possible applications have attracted the interest of many experimental and theoretical groups. In this thesis work some open questions about th...

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Autore principale: Galluppi, Massimo
Altri autori: Stolz, Wolfgang (Dr.) (Relatore della tesi)
Natura: Dissertation
Lingua:inglese
Pubblicazione: Philipps-Universität Marburg 2005
Soggetti:
Quantenwell
Physik
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Quantum wells
Photoconduction and photovoltaic effects
Simulated annealing
Electrooptical effects
III-V semiconductors
Band Offsets
Surface Photovoltage
Photolumineszenz
Physics
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