Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets

In the last decade great attention has been given to the characteristics of dilute nitrides. Both their peculiar physical properties and their wide range of possible applications have attracted the interest of many experimental and theoretical groups. In this thesis work some open questions about th...

Descrición completa

Gardado en:
Detalles Bibliográficos
Autor Principal: Galluppi, Massimo
Outros autores: Stolz, Wolfgang (Dr.) (BetreuerIn (Doktorarbeit))
Formato: Dissertation
Idioma:inglés
Publicado: Philipps-Universität Marburg 2005
Schlagworte:
Acceso en liña:Texto completo PDF
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!