Galluppi, M. (2005). Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets. Philipps-Universität Marburg. https://doi.org/10.17192/z2006.0102
Чикаго-гийн эшлэл (17 дахь хэвлэлт)Galluppi, Massimo. Optical Characterization of InGaAsN / GaAs Quantum Wells: Effects of Annealing and Determination of the Band Offsets. Philipps-Universität Marburg, 2005. https://doi.org/10.17192/z2006.0102.
MLA -ийн эшлэл (9 дэх хэвлэлт)Galluppi, Massimo. Optical Characterization of InGaAsN / GaAs Quantum Wells: Effects of Annealing and Determination of the Band Offsets. Philipps-Universität Marburg, 2005. https://doi.org/10.17192/z2006.0102.
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