Galluppi, M. (2005). Optical characterization of InGaAsN / GaAs quantum wells: Effects of annealing and determination of the band offsets. Philipps-Universität Marburg. https://doi.org/10.17192/z2006.0102
Cita Chicago (17th ed.)Galluppi, Massimo. Optical Characterization of InGaAsN / GaAs Quantum Wells: Effects of Annealing and Determination of the Band Offsets. Philipps-Universität Marburg, 2005. https://doi.org/10.17192/z2006.0102.
Cita MLA (9th ed.)Galluppi, Massimo. Optical Characterization of InGaAsN / GaAs Quantum Wells: Effects of Annealing and Determination of the Band Offsets. Philipps-Universität Marburg, 2005. https://doi.org/10.17192/z2006.0102.
Atenció: Aquestes cites poden no estar 100% correctes.