On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

Furkejuvvon:
Bibliográfalaš dieđut
Váldodahkki: Höchbauer, Tobias
Materiálatiipa: Dissertation
Giella:eaŋgalasgiella
Almmustuhtton: Philipps-Universität Marburg 2001
Fáttát:
Chemie
Silicon surface layer cleavage
Chemistry & allied sciences
Liŋkkat:PDF-ollesdeaksta
Fáddágilkorat: Lasit fáddágilkoriid
Eai fáddágilkorat, Lasit vuosttaš fáddágilkora!

Interneahtta

PDF-ollesdeaksta

oažžasuvvan:
Hildobáiki: urn:nbn:de:hebis:04-z2002-04033
Almmustuhttinbeaivi: 2003-08-06
Datum der Annahme: 2001-12-18
Downloads: 54 (2024), 99 (2023), 117 (2022), 159 (2021), 148 (2020), 370 (2019), 113 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
Liŋka materiálii: https://archiv.ub.uni-marburg.de/diss/z2002/0403
https://doi.org/10.17192/z2002.0403

Geahča maid