On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

Spremljeno u:
Bibliografski detalji
Glavni autor: Höchbauer, Tobias
Format: Dissertation
Jezik:engleski
Izdano: Philipps-Universität Marburg 2001
Teme:
Online pristup:PDF cijeli tekst
Oznake: Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!

Internet

PDF cijeli tekst

Detalji primjeraka od
Signatura: urn:nbn:de:hebis:04-z2002-04033
Datum izdanja: 2003-08-06
Datum der Annahme: 2001-12-18
Downloads: 55 (2024), 99 (2023), 117 (2022), 159 (2021), 148 (2020), 370 (2019), 113 (2018)
Lizenz: https://rightsstatements.org/vocab/InC-NC/1.0/
URL pristupa: https://archiv.ub.uni-marburg.de/diss/z2002/0403
https://doi.org/10.17192/z2002.0403