On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

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Bibliografske podrobnosti
Glavni avtor: Höchbauer, Tobias
Format: Dissertation
Jezik:angleščina
Izdano: Philipps-Universität Marburg 2001
Teme:
Chemie
Silicon surface layer cleavage
Chemistry & allied sciences
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