Canlyniadau Chwilio - Volz, Kerstin (Prof. Dr.)

Growth Dynamics and Morphology of GaP Nanowires investigated via Transmission Electron Microscopy gan Krug, David Peter

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In-situ Transmission Electron Microscopy of Crystal Growth under MOVPE Conditions gan Widemann, Maximilian

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Composition Determination of Semiconductors at Different Scattering Angles with the Help of Energy-Filtered STEM and Four-Dimensional STEM gan Firoozabadi, Seyyed Salehedin

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Epitaxial Growth of Highly Mismatched Alloys on GaAs Substrates gan Hepp, Thilo

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Investigation of the Surface Reconstruction and Gas Phase Composition during Growth by MOVPE gan Maßmeyer, Oliver Peter

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Analysis of Strain Relaxation, Ion Beam Damage and Instrument Imperfections for Quantitative STEM Characterizations gan Belz, Jürgen

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Methods and challenges in STEM composition determination of III/V semiconductors via complementary multislice simulations gan Duschek, Lennart

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Quantitative Scanning Transmission Electron Microscopy for III-V Semiconductor Heterostructures Utilizing Multi-Slice Image Simulations gan Kükelhan, Pirmin

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(Ga,In)(N,As,Sb) Solar Cells: N Incorporation using Novel Precursor in MOVPE Growth and Solar Cell Characteristics gan Sterzer, Eduard

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In Situ Thermal Annealing and Growth Investigations on III/V Semiconductor Materials gan Straubinger, Rainer

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MOVPE Growth Studies on Dilute Bismide Containing III/Vs & Development of an MOVPE In-Situ Gas Phase Analysis Setup gan Nattermann, Lukas Klaus

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Quantitative Evaluation of the Interfaces in III/V Semiconductors with Scanning Transmission Electron Microscopy gan Han, Han

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Electron Microscopy Characterization of Pentacene and Perfluoropentacene Grown on Different Substrates gan Félix Ángel, Rocío

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Structural characterization of antimonide-based metamorphic buffer layers on (001) silicon substrate gan Ott, Andrea

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Structural analysis of dilute bismide alloys by means of high resolution scanning transmission electron microscopy gan Knaub, Nikolai

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Microstructural Characterization of Dilute N-Containing Semiconductor Alloys and Heterostructures by Scanning Transmission Electron Microscopy gan Wegele, Tatjana

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Growth and characterization of dilute bismide GaAs based alloys for high efficiency infra red laser diodes gan Ludewig, Peter

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Quantitative Untersuchungen der Zusammensetzung von kubischen III/V-Verbindungshalbleitern mittels HAADF-STEM gan Fritz, Rafael

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Hochaufgelöste transmissionselektronenmikroskopische Untersuchungen an Galliumphosphid auf Silizium gan Beyer, Andreas

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