Publikationsserver der Universitätsbibliothek Marburg
Titel:Über den Einfluss von isoelektronischen Störstellen auf Bandbiegung und Unordnung in Verbindungshalbleitern
Autor:Karcher, Christian
Weitere Beteiligte: Heimbrodt, Wolfram (Prof. Dr.)
Veröffentlicht:2011
URI:https://archiv.ub.uni-marburg.de/diss/z2012/0126
DOI: https://doi.org/10.17192/z2012.0126
URN: urn:nbn:de:hebis:04-z2012-01266
DDC: Physik
Titel (trans.):On the Impact of Isoelectric Impurities on Band Bowing and Disorder of Compound Semiconductors
Publikationsdatum:2012-05-18
Lizenz:https://rightsstatements.org/vocab/InC-NC/1.0/

Dokument

Schlagwörter:
Donator <Halbleiterphysik>, Acceptor, Semiconductor physics, Donor, Isoelektronische Störstelle, Störstellenverteilung, Störstellenniveau, Impurity state, Bandbiegung, Akzeptor <Halbleiterphysik>, Impurity distribution, Isoelectronic impurity, Halbleiterphysik, Band gap

Zusammenfassung:
Der Einfluss von isolektronischen Störstellen auf die Eigenschaften von Verbindungshalbleitern wird anhand zweier Beispiele diskutiert: Zum einen Stickstoff in Ga(As,P) Quantenschichtstrukturen, zum anderen Schwefel bzw. Selen in ZnTe Einkristallen. Die Eigenschaften werden hierbei auf zwei durch optische Spektroskopie erfassbare Aspekte reduziert: Bandbiegung, d.h. der nicht-lineare Trend der Bandlücke des Mischmaterials auf der einen und Unordnung, d.h. insbesondere die Bildung einer stark lokalisierter Zustandsdichte unterhalb der fundamentalen Bandlücke auf der anderen Seite. Neben der rein experimentellen Betrachtung wird auch ein Einblick in die theoretische Simulation der unordnungsbedingten temperaturabhängigen Lumineszenz-Eigenschaften der Halbleiter durch Monte-Carlo-Simulationen gegeben.

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